HM0225-05B Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid PowerAmplifier

Preliminary
GaN Hybrid Power Amplifier
HM0225-05B
Product Features
• GaN on SiC HEMT
• 2-stage, In/Out 50Ω Impedance Matching
• Surface Mount Hybrid Type
• Compact Size & Low Weight
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radio System
Package Type : NP-1A
Description
HM0225-05B provides high RF performances from 200 ~ 2500MHz. The solution was developed for SDR (Software Defined Radio),
TRS (Trunked Radio Service), and other communication applications. Metal-Lid and AlN-board are utilized for thermal dissipation.
Electrical Specifications @V_ds1 =+8V, V_ds2 =+24V(200~2400MHz), +28V(2400~2500MHz), V_gs2@Idq2, Ta=25℃,
including External Circuit (See Page 3)
PARAMETER
UNIT
MIN
TYP
MAX
CONDITION
Frequency Range
MHz
200
-
2500
ZS = ZL = 50 ohm
Output Power
dBm
37
-
-
200~2500MHz
33
-
34
-
Power Gain
dB
34.5
-
35
-
-
200~1000MHz
Idq1 = 180mA
-
1000~2000MHz _{Idq2 = 250mA}
-
2000~2400MHz ^{Pout = 37dBm}
External Circuit
-
2400~2500MHz
PAE
%
31
-
-
200~2500MHz
IMD
dBc
-19
-25
-
Pout=31dBm (each tone)
Two-tone space=1MHz
Input Return Loss (S11)
dB
-5
-10
-
8
9
Supply Voltage
V
-
Vgs2@Idq2
-
-
24
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied.
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies.
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage.
Note
HM Series have internal DC blocking capacitors at the RF input and output ports.
Recommended External Circuit should be applied. (page 3)
Idq1=180mA, Idq2=250mA
Vds1
Vgs2
Vds2
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/6
All specifications may change without notice
Version 0.2