HM0220-05A Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier HM0220-05A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Weight
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radio System
• Medical Device
Package Type : NP-1A
Description
HM0220-05A have a high performance from 200 ~ 2000MHz. It has developed for Radio and TRS applications. Using metal-Lid and
AlN-board, it’s effective for thermal problems. This HM0220-05A is designed using Pout of 5W under Pin of 4dBm.
Electrical Specifications @ V_ds1 =8V , V_ds2 =24V, V_gs2@Idq2, Ta=25℃
PARAMETER
Frequency Range
Pout
Power Gain
Input Return Loss
PAE
Ids
UNIT
MHz
dBm
dB
%
mA
MIN
200
-
31
-5
30
-
TYP
-
37
35
-10
40
525
MAX
2000
-
-
-
-
650
IMD
dBc
-21
-25
-
Rising Time of Pout > 90%
µsec
-
10
-
Falling Time of Pout < 90%
-
8
-
Supply Voltage
V
-
Vgs2@Idq2
-
-
24
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HM Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 120mA
Idq2 = 250mA
Input Power= +2dBm
Pout=31dBm (each tone)
Two-tone space=1MHz
Lead and Trail Edge of
Drive Bias(+8V) = 10µsec
Vds1
Vgs2
Vds2
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/6
All specifications may change without notice
Version 1.6