CL3102D-L Datasheet, PDF (1/5 Pages) RFHIC – Limiter-diode LNA

Limiter-diode LNA
CL3102D-L
Product Features
• GaAs p-HEMT chip on board
• Limiter–diode insertion
• High Maximum Input Power(+30dBm)
• No matching circuit needed
• Single Supply Voltage (+5V)
• Surface Mount Hybrid Type
• Tape & Reel Packaging
• Small Size, High Heatsink
• Alumina Substrate
• Pb Free / RoHS Standard
Applications
• WiMAX, LTE
• Radar
• Repeater
• Base Station
• RF Sub-Systems
Description
This LNA family is a high gain, ultra low noise amplifier
Electrical Specifications
PARAMETER
Frequency Range
Small Signal Gain (S₂₁)
Gain Flatness
Input Return Loss (S₁₁)
Output Return Loss (S₂₂)
1dB Compression Point (P₁dB)
Output 3^rd Order Intercept Point
(OIP3) (TYP.)
Noise Figure (TYP.)
RF Input Power (for 12 hours)
UNIT
MHz
dB
dB
dB
dB
dBm
dBm
dB
dBm
MIN
2700
-
-
-
-
18
30
-
-
DC Supply
mA
-
Current (Vdc=+5V)
Test Condition
① Fc=3100MHz, Supply Voltage = +5V, 50ohm system, Ta = 25℃
② OIP3 is measured with two tones, at an output power of + 0dBm/tone separated by 1MHz.
TYP
-
11.5
±1.5
-14
-10
20
33
1.1
-
100
Absolute Maximum Ratings
PARAMETER
UNIT
RATING
Device Voltage
V
8
RF Input Power
dBm
30
Operating Temperature
℃
-40 ~ 85
Storage Temperature
℃
-50 ~ 125
Note
Operation of this device in excess of any one of these parameters may cause permanent damage.
Package Type : CP-16A
MAX
3500
-
-
-
-
-
-
1.5
30
120
REMARK
-
-
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/5
All specifications may change without notice
Version 1.1