AP222_14 Datasheet, PDF (1/6 Pages) RFHIC – High Linearity Drive Amplifier

MMIC
AP222
Product Features
• 50 ~ 3000 MHz
• GaAs MMIC
• 43dBm Output IP3
• 13dB Gain
• 26dBm P1dB
• Single +9V Supply
Applications
• CDMA, W-CDMA Medium Power Amplifier
• High Linearity Drive Amplifier
Description
AP222 is a high linearity amplifier designed with GaAs MMIC.
AP222 is designed for applications such as GSM, CDMA, W-CDMA driver devices which require high IP3
Package Type : SOIC-8
Electrical Specifications @ Ta=+25℃, V_DD=+9V, Fc=900 MHz
PARAMETER
UNIT
MIN
TYP
Gain
dB
12
13
Input Return Loss
dB
-
-20
Output Return Loss
dB
-
-20
Output IP3
dBm
38
43
1dB Compression Point
dBm
-
26
Noise Figure
dB
-
2.8
DC Current
mA
-
240
Supply Voltage
VDC
-
9
Thermal Resistance (Rth) ℃/W
-
-
OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz
Absolute Maximum Ratings
PARAMETER
Device Voltage
RF Input Power
Storage Temperature
UNIT
VDC
dBm
℃
MIN
-
-
-40
MAX
-
-
-
-
-
-
-
-
20
MAX
12
15
150
Operating Ranges
PARAMETER
Operating Frequency
Device Voltage
Case Temperature
UNIT
MHz
VDC
℃
MIN
50
-
-40
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/6
TYP
-
9
-
MAX
3000
10
85
All specifications may change without notice
Version 5.4