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AP211_14 Datasheet, PDF (1/6 Pages) RFHIC – High Linearity Drive Amplifier
MMIC
Product Features
• 50 ~ 3000 MHz
• GaAs MMIC
• 42dBm Output IP3
• 13dB Gain
• 24dBm P1dB
• Single +5V Supply
AP211
Applications
• CDMA, W-CDMA Medium Power Amplifier
• High Linearity Drive Amplifier
Description
AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.
AP211 is designed for applications such as GSM, CDMA, W-CDMA drive devices which require high IP3.
Package Type : SOIC-8
Electrical Specifications @ Ta=+25℃, VDD=+5V, Fc=900 MHz
PARAMETER
UNIT
MIN
TYP
Gain
dB
12
13
Input Return Loss
dB
-
-20
Output Return Loss
dB
-
-22
Output IP3
dBm
38
42
1dB Compression Point
dBm
-
24
Noise Figure
dB
-
2.5
DC Current
mA
-
230
Supply Voltage
VDC
-
5
Thermal Resistance (Rth) ℃/W
-
-
OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz
Absolute Maximum Ratings
PARAMETER
Device Voltage
RF Input Power
Storage Temperature
UNIT
VDC
dBm
℃
MIN
-
-
-40
MAX
-
-
-
-
-
-
-
-
33
MAX
8
10
150
Operating Ranges
PARAMETER
Operating Frequency
Device Voltage
Case Temperature
UNIT
MHz
VDC
℃
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
MIN
50
-
-40
1/6
TYP
-
5
-
MAX
3000
6
85
All specifications may change without notice
Version 5.4