AE617 Datasheet, PDF (1/3 Pages) RFHIC – E-pHEMT MMIC

AE617
E-pHEMT MMIC (Preliminary)
Product Features
• Small size
• Higher Gain
• Higher linearity
• SOIC-8 SMD Type package
• Higher productivity
• Lower manufacturing cost
• -63dBc CSO 79 Channels @ +39dBmV/ch
• -64dBc CTB 79 Channels @ +39dBmV/ch
• -57dBc XMD 79 Channels @ +39dBmV/ch
• Low Noise Figure
Application
• Low Noise Amplifier for
CATV, Satellite
• Cable Modem
• FTTH (G-PON, GE-PON)
• Optical node
Package : SOIC-8
Description
AE617 is designed as low cost drive amplifiers for many applications including FTTH, CATV System.
This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
The data in this spec sheet is valid only for 75 ohm application. 50 ohm data is in a separate spec sheet.
Specifications
PARAMETER
UNIT
MIN
TYP
MAX
Condition
Frequency
MHz
50 ~ 1000
Gain
dB
20
22
Input Return Loss
dB
-22
Output Return Loss
dB
-17
Output IP3
dBm
38
41
At 500MHz/10dBm 2tone
1dB Compression Point
dBm
25
28
At 500MHz
Noise Figure
dB
2.3
3.5
CSO
dBc
-63
-58
79 channel, +39dBmV/ch
CTB
30 ~ 870MHz
dBc
-64
-59
79 channel, +39dBmV/ch
XMOD
dBc
-57
-52
79 channel, +39dBmV/ch
DC Current
mA
260
Vdd = 8.0V
NOTE
1. Test conditions unless otherwise noted. Test Freq = 500MHz, T=25℃, Vdd=8V, 75Ω system
2. OIP3 measured with 2 tones at an output power of +10dBm/tone separated by 1MHz, Test Freq = 500MHz
Absolute Minimum and Maximum Ratings
PARAMETER
UNIT
MIN
TYP
MAX
Device Voltage
VDC
+8
+9
Operating Temperature
℃
-40
+85
Storage Temperature
℃
-40
+150
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▪ All specifications may change without notice.
▪ Version 0.1