AE616 Datasheet, PDF (1/8 Pages) RFHIC – E-pHEMT

E-pHEMT
AE616
Product Features
Application
• 500 ~ 4000MHz
• GaAs E-pHEMT
• 37dBm Output IP3
• 20dB Gain at 900MHz
• 24dBm P1 dB
• Single +5V Supply
• Pb Free / RoHS Standard
• Cellular, PCS, W-CDMA Systems
• High Linearity Drive Amplifier
Package Type: SOT-89
Description
AE616 is a drive or pre-drive amplifier designed with GaAs E-pHEMT in a low cost SOT-89 package.
This E-pHEMT amplifier is designed as driver devices for infrastructure equipment in the 500~4000MHz Wireless technologies
such as cellular, GSM, PCS, CDMA, W-CDMA, Wibro, Wimax.
Specifications
PARAMETER
Frequency Range
Gain (S₂₁)
Input Return Loss (S₁₁)
Output Return Loss (S₂₂)
Output 3^rd Order Intercept Point (OIP3)
Output 1dB compression Point (P₁dB)
Noise Figure
DC Operating Current
Operating Gate Voltage(Vds=5V, Ids=85mA)
Threshold voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
V
Min
10
10
35
22
70
0.1
Typ
500-4000
20
12
12
37
24
2.7
85
0.4
0.25
Max
3.4
100
0.4
Test Condition
① 880MHz, Vds=5V, Ids=85mA at 25℃
② OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz..
Absolute Maximum Ratings
PARAMETER
Operating Case Temperature (℃)
Storage Temperature (℃)
Drain-Source Voltage
Drain Current
Gate-Source Voltage
Channel Temperature
RF Input Power
Rating
-40 ~ 85
-50 ~ 125
+7V
250mA
-5V ~ 1V
150℃
25dBm
Remark
▪ Tel : [phone]
▪ [e-mail]
▪ All specifications may change without notice.
▪ Version 1.4