AE510 Datasheet, PDF (1/6 Pages) RFHIC – Lower manufacturing cost

E-pHEMT MMIC
Product Features
• 30 ~ 3000MHz
• High Gain
• High linearity
• SOIC-8 SMD Type package
• Lower manufacturing cost
• -74dBc CSO 79 Channels @ +30dBmV/ch
• -73dBc CTB 79 Channels @ +30dBmV/ch
AE510
Applications
• Low Noise Amplifier for
CATV
• Cable Modem
• FTTH (G-PON, GE-PON)
• Optical node
Package Type : SOIC-8
Description
AE510 is designed as low cost drive amplifiers for many applications including FTTH, CATV System.
This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
The data in this spec sheet is valid only for 75ohm application. 50ohm data is in a separate spec sheet.
Electrical Specifications
PARAMETER
Frequency
UNIT
MHz
MIN
30
TYP
-
MAX
3000
Gain
17
19
-
dB
14
17
-
Gain Flatness
Input Return Loss
0.7
dB
-
-
2.5
dB
-
-17
-
Output Return Loss
dB
-
-18
-
Output IP3
dBm
37
40
-
1dB Compression Point
dBm
20
23
-
Noise Figure
dB
-
3.0
4.0
CSO
CTB
dBc
-
-74
-69
30 ~ 1004MHz
dBc
-
-73
-68
DC Current
mA
-
200
-
Note
1. Test conditions unless otherwise noted. Test Freq = 500MHz, T=25℃, Vdd=5V, 75Ω system
2. OIP3 measured with 2 tones at an output power of +5dBm/tone separated by 1MHz, Test Freq = 500MHz
CONDITION
-
30 ~ 1000MHz
50 ~ 2700MHz
30 ~ 1000MHz
50 ~ 2700MHz
-
-
@ 500MHz/5dBm 2tone
@500MHz
30 ~ 1000MHz
79 channel, +30dBmV/ch
Vdd = 5.0V
Absolute Maximum Ratings
PARAMETER
Device Voltage
Operating Temperature
Storage Temperature
ESD Human Body Model
Moisture Sensitivity Level
Junction Temperature (Tj)
Thermal Resistance (Rth)
UNIT
VDC
℃
℃
-
-
℃
℃/W
MIN
-
-40
-40
-
-
-
-
TYP
5
-
-
Class 1A
MSL1
-
45
MAX
8
85
150
-
-
180
-
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/6
All specifications may change without notice
Version 1.1