AE379 Datasheet, PDF (1/5 Pages) RFHIC – drive or pre-drive amplifier designed in a low cost SOIC-8 package.

E-pHEMT MMIC
Product Features
• 50 ~ 3500MHz
• GaAs E-pHEMT MMIC
• 2W Medium Amplifier
• Higher linearity
• Low Noise Figure
• High Max input power
• SOIC-8 SMD Type package
• Higher productivity
• Lower manufacturing cost
• Pb Free / RoHS Standard
AE379
Applications
• Cellular, GSM
• PCS, DCS, W-CDMA
• Wibro, WiMax, WiFi
• Tetra, CATV, Satellite system
• RFID, Femtocell
• Multi-metering
Package Type : SOIC-8
Description
AE379 is a drive or pre-drive amplifier designed in a low cost SOIC-8 package.
This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current and high IP3.
It is designed as driver devices for infrastructure equipment in the 50~3500MHz Wireless technologies such as Cellular, GSM, PCS,
W-CDMA, Wibro, WiMax System.
The data in this spec sheet is valid only for 50ohm application.
Electrical Specifications
PARAMETER
UNIT
Test Frequency
1920 ~ 1980MHz
Small Signal Gain
dB
11.5
Input Return Loss
dB
-13
Output Return Loss
dB
-16
Output IP3*
dBm
45
1dB Compression Point
dBm
33
Noise Figure
dB
2.3
WCDMA**
dBm
23
Efficiency
%
60
Supply Voltage/DC Current
V/mA
Note
1. OIP3 measured with 2 tones at an output power of +15dBm/tone separated by 1MHz
2. WCDMA 3G 1FA Test Model1 64DPCH, PAR = 10dB@0.01%
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Absolute Maximum Ratings
4BPARAMETER
Device Voltage
Operating Case Temperature
Storage Temperature
ESD Human Body Model
Moisture Sensitivity Level
UNIT
V
℃
℃
-
-
MIN
-
-40
-40
-
-
TYP
5
-
-
Class 1C
MSL1
MAX
7
85
150
-
-
REMARK
-
-
-
-
-
-
@-50dBc ACLR
@ P1dB
-
REMARK
-
-
-
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.3