AE366 Datasheet, PDF (1/3 Pages) RFHIC – E-pHEMT MMIC

AE366
E-pHEMT MMIC (Preliminary)
Product Features
• 50 ~ 1000MHz
• GaAs E-pHEMT MMIC
• Higher linearity, Higher Gain
• Low Noise Figure
• High Max input power
• SOT-89 SMD Type package
• Higher productivity
• Lower manufacturing cost
• Pb Free / RoHS Standard
Application
• Receiver IF Amplifier
• Cellular, GSM
• Base station
• RF Sub-system
Package : SOT-89
Description
AE366 is a drive or pre-drive amplifier designed in a low cost SOT-89 package.
This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current and high IP3.
It is designed as driver devices for infrastructure equipment in the 50~1000MHz Wireless technologies such as IF, Cellular, GSM
System. The data in this spec sheet is valid only for 50 ohm application.
Specifications
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
50 ~ 1000
Gain
dB
23
Input Return Loss
dB
-20
Output Return Loss
dB
-20
Output IP3
dBm
36
39
1dB Compression Point
dBm
19
22
Noise Figure
dB
1.6
DC Current
mA
95
Supply Voltage
V
5
NOTE
1. Test conditions unless otherwise noted. Freq=50~1000MHz, Vdd=+5V, Ta=25℃, 50Ω system
2. OIP3 measured with 2 tones at an output power of +10dBm/tone separated by 1MHz
MAX
2.1
Remark
Absolute Minimum and Maximum Ratings
PARAMETER
UNIT
MIN
TYP
MAX
Device Voltage
V
+5
+7
Operating Temperature
℃
-40
+85
Storage Temperature
℃
-40
+150
▪ Tel : [phone]
▪ [e-mail]
▪ All specifications may change without notice.
▪ Version 0.3