R2J25953 Datasheet, PDF (9/17 Pages) Renesas Technology Corp – H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET

R2J25953
Rise Time vs. Iout
PWM = 20 kHz, INA = High, INB = Low,
V_CC = 12 V
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12
Iout (A)
I_CC0 vs. Ta
45
V_CC = 12 V, Standby Mode
40
35
30
25
20
15
10
5
0
-50 -25 0 25 50 75 100 125 150 175
Ta (°C)
Over-Voltage Detection vs. Ta
40
35
30
25
20
15
10
0
-50 -25 0 25 50 75 100 125 150 175
Ta (°C)
R07DS0044EJ0300 Rev.3.00
Sep 01, 2010
Preliminary
Fall Time vs. Iout
PWM = 20 kHz, INA = High, INB = Low,
V_CC = 12 V
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12
Iout (A)
I_CC vs. Ta
8
V_CC = 12 V, Enable Mode
7
6
5
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150 175
Ta (°C)
Over-Voltage Return vs. Ta
40
35
30
25
20
15
10
0
-50 -25 0 25 50 75 100 125 150 175
Ta (°C)
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