HTT1132E Datasheet, PDF (9/21 Pages) Renesas Technology Corp – Silicon NPN Epitaxial Twin Transistor

HTT1132E
Q1 S Parameter
(V_CE = 1 V, I_C = 5 mA, Z_O = 50 Ω)
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
S11
MAG
0.852
0.809
0.739
0.676
0.616
0.566
0.525
0.489
0.461
0.442
0.423
0.409
0.398
0.389
0.386
0.381
0.381
0.376
0.378
0.376
0.378
0.380
0.385
0.386
0.392
0.395
0.399
0.402
0.407
0.412
ANG
-17.6
-34.3
-49.1
-63.5
-76.4
-88.0
-98.1
-107.5
-116.0
-123.6
-131.2
-138.0
-144.4
-150.2
-155.6
-160.6
-165.9
-170.3
-175.3
-179.5
176.2
172.6
168.9
165.6
162.0
159.0
155.5
152.7
150.0
146.9
S21
MAG
14.12
13.17
12.12
11.10
10.09
9.18
8.32
7.60
6.97
6.42
5.93
5.51
5.15
4.82
4.53
4.28
4.05
3.84
3.66
3.49
3.33
3.19
3.06
2.94
2.83
2.73
2.63
2.55
2.46
2.39
ANG
165.7
153.2
142.5
133.5
125.5
118.8
113.2
108.3
103.9
100.1
96.6
93.4
90.5
87.7
85.1
82.8
80.4
78.2
76.0
73.9
71.9
69.9
68.0
66.2
64.3
62.6
60.8
59.1
57.4
55.6
S12
MAG
0.0299
0.0369
0.0472
0.0553
0.0598
0.0674
0.0737
0.0762
0.0793
0.0847
0.0869
0.0917
0.0954
0.0966
0.1027
0.1048
0.1095
0.1130
0.1161
0.1217
0.1252
0.1281
0.1335
0.1368
0.1412
0.1440
0.1504
0.1540
0.1586
0.1634
ANG
74.4
67.3
60.9
63.3
55.4
52.9
52.4
51.1
51.0
50.1
50.8
50.9
50.5
49.5
50.7
50.7
50.4
51.3
51.7
51.5
51.8
51.9
52.6
52.5
52.2
53.3
52.9
53.3
52.4
52.2
S22
MAG
0.965
0.906
0.832
0.756
0.692
0.629
0.580
0.539
0.507
0.475
0.453
0.430
0.412
0.396
0.382
0.373
0.362
0.353
0.341
0.338
0.329
0.323
0.318
0.314
0.310
0.307
0.299
0.299
0.294
0.293
ANG
-9.2
-19.5
-26.3
-32.1
-36.5
-39.9
-42.0
-44.1
-45.5
-46.5
-47.4
-48.5
-49.2
-50.0
-50.7
-51.6
-52.3
-53.6
-54.5
-55.4
-56.5
-57.5
-58.9
-60.1
-61.5
-62.5
-64.1
-65.6
-67.4
-68.4
Rev.1.00, Apr.14.2003, page 9 of 21