HM62W8512B Datasheet, PDF (9/18 Pages) Hitachi Semiconductor – 4 M SRAM (512-kword x 8-bit)

HM62W8512B Series
AC Characteristics (Ta = –20 to +70°C, V_CC = 3.3 V ±0.3 V, unless otherwise noted.)
Test Conditions
• Input pulse levels: 0.4 V to 2.4 V
• Input rise and fall time: 5 ns
• Input timing reference levels: 1.4 V
• Output timing reference level: 1.4 V/1.4 V(HM62W8512B-5)
0.8 V/2.0 V(HM62W8512B-7)
• Output load (Including scope & jig)
Dout
500 Ω
50 pF
1.4 V
Read Cycle
HM62W8512B
-5
-7
Parameter
Symbol Min
Max
Min
Read cycle time
t _RC
55
—
70
Address access time
t _AA
—
55
—
Chip select access time
t _CO
—
55
—
Output enable to output valid
t _OE
—
30
—
Chip selection to output in low-Z
t _LZ
10
—
10
Output enable to output in low-Z
t _OLZ
5
—
5
Chip deselection to output in high-Z t_HZ
0
20
0
Output disable to output in high-Z t_OHZ
0
20
0
Output hold from address change t_OH
10
—
10
Max
Unit
Notes
—
ns
70
ns
70
ns
35
ns
—
ns
2
—
ns
2
30
ns
1, 2
30
ns
1, 2
—
ns
7