R5F21346UNFP_11 Datasheet, PDF (87/95 Pages) Renesas Technology Corp – RENESAS MCU

R8C/34U Group, R8C/34K Group
5. Electrical Characteristics
Table 5.68 Electrical Characteristics (5) [1.8 V ≤ VCC < 2.7 V]
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ. Max.
VOH
Output “H” voltage Other than XOUT
Drive capacity High IOH = −2 mA VCC − 0.5 —
VCC
V
Drive capacity Low IOH = −1 mA VCC − 0.5 —
VCC
V
XOUT
IOH = −200 µA 1.0
—
VCC
V
VOL
Output “L” voltage Other than XOUT Drive capacity High IOL = 2 mA
—
—
0.5
V
Drive capacity Low IOL = 1 mA
—
—
0.5
V
XOUT
IOL = 200 µA
—
—
0.5
V
VT+-VT- Hysteresis
NT0, INT1, INT2,
INT3, INT4,
KI0, KI1, KI2, KI3,
TRAIO, TRCIOA,
TRCIOB, TRCIOC,
TRCIOD, TRFI,
TRCTRG, TRCCLK,
ADTRG, RXD0,
RXD1, RXD2, RXD3,
CLK0, CLK1, CLK2,
CLK3, CTS2, SSI,
SCL, SDA, SSO,
SSCK, SCS
0.05
0.20
—
V
RESET
0.05
0.20
—
V
IIH
Input “H” current
VI = 2.2 V, VCC = 2.2 V
—
—
4.0
µA
IIL
Input “L” current
VI = 0 V, VCC = 2.2 V
—
—
−4.0 µA
RPULLUP Pull-up resistance
VI = 0 V, VCC = 2.2 V
70
140
300
kΩ
RfXIN
Feedback
XIN
resistance
—
0.3
—
MΩ
VRAM
RAM hold voltage
During stop mode
1.8
—
—
V
Note:
1. 1.8 V ≤ VCC < 2.7 V, Topr = −20 to 85 °C (N version)/-40 to 85 °C (D version), and f(XIN) = 5 MHz, unless otherwise specified.
R01DS0113EJ0110 Rev.1.10
Jun 15, 2011
Page 87 of 91