R5F2LA64ANFP Datasheet, PDF (80/106 Pages) Renesas Technology Corp – Household appliances, office equipment, audio equipment, consumer products

R8C/LA3A Group, R8C/LA5A Group, R8C/LA6A Group, R8C/LA8A Group
5. Electrical Characteristics
Table 5.34
Gain Amplifier Characteristics
(VSS = 0 V and Topr = −20 to 85 °C (N version)/−40 to 85 °C (D version), unless
otherwise specified.)
Symbol
VGAIN
φAD
Parameter
Gain amplifier operating range
A/D conversion clock
Conditions
Standard
Unit
Min. Typ.
Max.
0.4
– AVCC – 1.0
V
1
–
5
MHz
Table 5.35
Comparator B Characteristics
(VCC = 1.8 to 5.5 V and Topr = −20 to 85°C (N version)/ −40 to 85°C (D version), unless
otherwise specified.)
Symbol
Parameter
Vref
IVREF1, IVREF3 input reference voltage
VI
IVCMP1, IVCMP3 input voltage
−
Offset
td
Comparator output delay time ⁽¹⁾
ICMP
Comparator operating current
Note:
1. When the digital filter is disabled.
Condition
VI = Vref ± 100 mV
VCC = 5.0 V
Standard
Unit
Min. Typ.
Max.
0
–
VCC − 1.4
V
-0.3
–
VCC + 0.3
V
–
5
100
mV
–
–
1
µs
–
12
–
µA
Table 5.36 Flash Memory (Program ROM) Characteristics
(VCC = 1.8 to 5.5 V and Topr = 0 to 60°C, unless otherwise specified.)
Symbol
–
–
–
td(SR-SUS)
–
td(CMDRST-READY)
–
–
–
–
Parameter
Program/erase endurance ⁽¹⁾
Byte program time
Block erase time
Time delay from suspend request
until suspend
Time from suspend until erase
restart
Time from when command is forcibly
terminated until reading is enabled
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time ⁽⁶⁾
Conditions
Ambient temperature = 85°C
Min.
10,000 ⁽²⁾
–
–
–
–
–
1.8
1.8
0
10
Standard
Typ.
Max.
–
–
80
–
0.12
–
– 0.25 + CPU clock
× 3 cycles
– 30 + CPU clock
× 1 cycle
– 30 + CPU clock
× 1 cycle
–
5.5
–
5.5
–
60
–
–
Unit
times
µs
s
ms
µs
µs
V
V
°C
year
Notes:
1. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
2. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
5. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
6. The data hold time includes time that the power supply is off or the clock is not supplied.
R01DS0011EJ0100 Rev.1.00
Dec 21, 2010
Page 80 of 102