TBB1012 Datasheet, PDF (8/14 Pages) Renesas Technology Corp – Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

TBB1012
• FET2
Maximum Channel Power Dissipation Curve
400
300
200
100
0
50
100
150
200
Ambient Temperature Ta (°C)
* Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
V_G2S = 4 V
15 ^{RG = 82 kΩ}
4V
10
2V
5
V_G2S = 1 V
0
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate Resistance
30
V_DS = 5 V
25
V_G1 = 5 V
V_G2S = 4 V
20
15
10
5
10
100
1000
Gate Resistance R_G (kΩ)
Rev.2.00 Aug 22, 2006 page 8 of 13
Typical Output Characteristics
25
V_G2S = 4 V
V_DS = V_G1
20
56 kΩ
68 kΩ
82 kΩ
15
100 kΩ
10
120 kΩ
150 kΩ
5
R_G = 180 kΩ
0
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
50
V_DS = 5 V
V_G2S = 4 V
40 R_G = 82 kΩ
f = 1 kHz
4V
30
3V
20
10
2V
0
0
1
V_G2S = 1 V
2
3
4
5
Gate1 Voltage V_G1 (V)
Input Capacitance vs.
Gate2 to Source Voltage
5
4
3
2
V_DS = 5 V
1 ^VG1 ^{= 5 V}
R_G =82 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)