PS9031 Datasheet, PDF (8/19 Pages) Renesas Technology Corp – 2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE

PS9031
TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified)
Chapter Title
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
200
150
100
50
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
40
30
20
10
0
25
50
75 100 125 150
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
10
1
TA = 125°C
100°C
85°C
50°C
0.1
25°C
0°C
-40°C
0.01
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage VF (V)
OUTPUT VOLTAGE vs.
FORWARD CURRENT
35
30
VCC = 30 V,
VEE = GND
25
20
15
10
5
0
0
1
2
3
Forward Current IF (mA)
0
25
50
75 100 125 150
Ambient Temperature TA (°C)
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
3
VCC = 30 V,
VEE = GND,
Vth = 5 V
IFLH
2
1
IFHL
0
-50 -25 0 25 50 75 100 125 150
Ambient Temperature TA (°C)
HIGH LEVEL OUTPUT VOLTAGE SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
0
VCC = 30 V,
-1
VEE = GND,
IF = 10 mA
-2
TA = -40°C
-3
-4
-5
TA = 125°C
TA = 25°C
-60.0
0.5
1.0
1.5
2.0
2.5
High Level Output Current IOH (A)
Remark The graphs indicate nominal characteristics.
R08DS0131EJ0200 Rev.2.00
Mar 11, 2016
Page 8 of 18