NP88N04EHE_15 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
Figure12. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
9
8
7
6
5
VGS = 10 V
4
3
2
1
0
ID = 44 A
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure14. CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Diode Forward Current - A
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
VGS = 10 V
100
0V
10
1
0.1
0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
100
tf
td(on)
td(off)
tr
10
VDD = 20 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
10
9
VDD = 32 V
20 V
8V
8
7
VGS
6
5
4
3
2
VDS
1
ID = 88 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
6
Data Sheet D14236EJ8V0DS