NP84N075EUE_15 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
Pulsed
25
20
VGS = 10 V
15
10
5
0
ID = 42 A
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 _Pulsed
100
VGS = 10 V
0V
10
1
0.1
0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
td(off)
td(on)
tr
10
VDD = 38 V
VGS = 10 V
1 ^{RG = 0 Ω}
0.1
1
10
100
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Diode Forward Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
VGS
80
VDD = 60 V
8
38 V
15 V
60
6
40
4
20
VDS
2
ID = 84 A
0
0
0 20 40 60 80 100 120
QG - Gate Charge - nC
6
Data Sheet D14675EJ4V0DS