NP80N04MLG Datasheet, PDF (8/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
VGS = 4.5 V
4
10 V
2
Pulsed
NP80N04MLG, NP80N04NLG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04MLG, NP80N04NLG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 4.5 V, ID = 35 A
6
10 V, 40 A
4
2
0
-75
Pulsed
NP80N04MLG, NP80N04NLG
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
VGS = 4.5 V
4
10 V
2
Pulsed
NP80N04PLG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04PLG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 4.5 V, ID = 35 A
6
10 V, 40 A
4
2
0
-75
Pulsed
NP80N04PLG
-25 25 75 125 175 225
Tch - Channel Temperature - °C
6
Data Sheet D19797EJ1V0DS