HD74CBTS16212A Datasheet, PDF (8/13 Pages) Renesas Technology Corp – 24-bit FET Bus-Exchange Switches with Schottky diode clamping

HD74CBTS16212A
DC Electrical Characteristics
(Ta = −40 to 85°C)
Item
Clamp diode voltage
Input voltage
On-state switch
resistance ^*2
Symbol
V
IK
V
IH
V_IL
R_ON
V (V) Min
CC
4.5

4.0 to 5.5 2.0
4.0 to 5.5 
4.0

4.5

4.5

4.5

Input current
I_IN
0 to 5.5 
Typ ^*1



14
Max
−1.2

0.8
20
4
7
4
7
6
12

±1.0
Unit
V
V
Test conditions
I
IN
=
−18
mA
Ω
V_IN = 2.4 V,
I = 15 mA
IN
Typ at V = 4.0 V
CC
V_IN = 0 V,
I_IN = 64 mA
V_IN = 0 V,
I_IN = 30 mA
V = 2.4 V,
IN
I = 15 mA
IN
µA
V_IN = 5.5 V or GND
control inputs
Off-state leakage
I_OZ
current
5.5
–1.0 

µA
V_O = GND
A or B
5.5


20
V_O = 5.5 V
A or B
Quiescent supply
I_CC
5.5
current
Increase in I
CC
per input ^*3
∆I_CC
5.5


3
µA
V_IN = V_CC or GND,
I_O = 0 mA


2.5
mA One input at 3.4 V,
other inputs at V or
CC
GND
Notes:
For condition shown as Min or Max use the appropriate values under recommended operating
conditions.
1. All typical values are at V_CC = 5 V (unless otherwise noted), Ta = 25°C.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the
switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level
rather than V or GND.
CC
Rev.0, Feb. 2002, page 6 of 6