H7N0312LD Datasheet, PDF (8/13 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0312LD, H7N0312LS, H7N0312LM
Body-Drain Diode Reverse
Recovery Time
100
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
50
20
10
0.1 0.3
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
3000
1000
Coss
Crss
300
100
0
VGS = 0
f = 1 MHz
5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
50
20
I _D = 85 A
40
30
V_DS
V_DD = 5 V
10 V
25 V
16
V_{GS 12}
20
8
10
V _DD = 25 V
4
10 V
5V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Switching Characteristics
1000
V_GS = 10 V , V_DS = 10 V
500 ^{Rg = 4.7 Ω, duty < 1 %}
tr
200
t _d(off)
100
50 ^{t d(on)}
tf
20
10
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Rev.1, Aug. 2002, page 6 of 11