BCR5KM Datasheet, PDF (8/11 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current Tj=150°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=7A, Instantaneous measurement
VFGT !
VRGT !
Gate trigger voltage ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
IFGT !
IRGT !
Gate trigger current ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT #
#
VGD
Rth (j-c)
Gate non-trigger voltage
Thermal resistance
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ^✽4
Rth (j-a) Thermal resistance
Junction to ambient
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Limits
Min. Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2/0.1 —
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15 ^✽3
15 ^✽3
15 ^✽3
—
3.8
50
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
°C/ W
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10²
7
5
3
2
10¹
7
Tj = 150°C
5
3
2
10⁰
7
5
3
Tj = 25°C
2
10^–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ON-STATE VOLTAGE (V)
100
90
80
70
60
50
40
30
20
10
0
10⁰
RATED SURGE ON-STATE
CURRENT
2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002