BCR08AM_15 Datasheet, PDF (8/8 Pages) Renesas Technology Corp – LOW POWER USE PLANAR PASSIVATION TYPE

COMMUTATION CHARACTERISTICS
10¹
7 ^{TYPICAL EXAMPLE}
5
CONDITIONS
VD = 200V
IT = 1A
3
τ = 500µs
2
Tj = 125°C
10⁰
7
5
3
2
10^–1
10^–1
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
I QUADRANT
2 3 5 7 10⁰ 2 3 5 7 10¹
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE II TEST PROCEDURE III
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
7
TYPICAL EXAMPLE
5
IRGT I
3
IRGT III
2
10²
7
5
3
2
10¹
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
GATE CURRENT PULSE WIDTH (µs)
Mar. 2002