2SK3435_15 Datasheet, PDF (8/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 31 A
10
E_{AS = 96 mJ}
1
VDD = 30 V
RG = 25 Ω
0.1 ^{VGS = 20 → 0 V}
10 µ
100 µ
1m
L - Inductive Load - H
10 m
2SK3435
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 30 V
140
RG = 25 Ω
VGS = 20 → 0 V
120
IAS ≤ 31 A
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6
Data Sheet D14604EJ3V0DS