S11454EJ3V0DS00_15 Datasheet, PDF (7/22 Pages) Renesas Technology Corp – 2660 PIXELS CCD LINEAR IMAGE SENSOR

μ PD3734A
ELECTRICAL CHARACTERISTICS
TA = +25°C, VOD = 12 V, fφ 1 = 0.5 MHz, data rate = 1 MHz, storage time = 10 ms
light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 Vp-p
Parameter
Symbol
Saturation voltage
Vsat
Saturation exposure
SE
Photo response non-uniformity PRNU
Average dark signal
ADS
Dark signal non-uniformity
DSNU
Power consumption
PW
Output impedance
ZO
Response
RF
Response peak
Image lag
IL
Offset level
VOS
Output fall delay time ^Note
td
Register imbalance
RI
Total transfer efficiency
TTE
Dynamic range
DR
Reset feed-through noise
RFSN
Sample and hold noise
SHSN
Bit noise
BN
Random noise
σ
Resolution
MTF
Note Refer to TIMING CHART2.
Test Conditions
Daylight color fluorescent lamp
VOUT = 500 mV
Light shielding
Light shielding
Daylight color fluorescent lamp
VOUT = 1 V
VOUT = 500 mV, t1, t2 = 30 ns
VOUT = 500 mV
VOUT = 1 V, data rate = 4 MHz
Vsat/DSNU
Light shielding
Light shielding,
φ SHB series resistor 47 Ω
S/H in used
S/H not in used
Modulation transfer function at
nyquist frequency
MIN.
1.5
–
–
–
–
–
–
49
–
–
3.5
–
0
92
–
–900
–50
–
–
–
–
TYP.
2.0
0.029
±2
1.0
4
190
0.5
70
550
0.3
4.5
80
–
–
500
–200
0
4.5
0.9
0.9
65
MAX.
–
–
±8
3.0
6
250
1
91
–
1.0
5.5
–
3
–
–
+500
+50
–
–
–
–
Unit
V
lx•s
%
mV
mV
mW
kΩ
V/Ix•s
nm
%
V
ns
%
%
times
mV
mV
mVp-p
mV
mV
%
Data Sheet S11454EJ3V0DS
5