RQK0302GGDQS_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK0302GGDQS
Dynamic Input Characteristics
100
20
I_D = 3.8 A
Tc = 25°C
80
16
60
V_DD =10 V
12
20 V
40
V_{GS 8}
20 ^VDS
4
V_DD = 20 V
10 V
0
0
0 0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nC)
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
100
Coss
10
Crss
V_GS = 0 V
f = 1 MHz
1
0
10
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
5V
Pulse Test
Tc = 25°C
3
2
V_GS = 10 V
1
0 V, –5 V, –10 V
0
0 0.4 0.8 1.2 1.6 2.0
Source Drain Voltage V_SD (V)
Switching Characteristics
1000
100 ^tf
V_DD = 10 V
V_GS = 10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
td(off)
td(on)
10
tr
1
0.01
0.1
1.0
10
Drain Current I_D (A)
Input Capacitance vs.
Gate to Source Voltage
260
250
240
230
220
210
200 _{VDS = 0 V}
f = 1 MHz
190
–10
–5
0
5
10
Gate to Source Voltage V_GS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.8
V_GS = 0
0.7
0.6
I_D = 10 mA
0.5
0.4
1 mA
0.3
0.2
0.1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 22, 2006 page 5 of 6