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RQA0009TXDQS Datasheet, PDF (7/13 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET
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RQA0009TXDQS
Output Power, Drain Current
vs. Input Power
40
1.6
35
1.4
Pout
30
1.2
25
1.0
ID
20
0.8
15
0.6
10
VDS = 4.8 V 0.4
5
IDQ = 300 mA
f = 465 MHz
0.2
0
0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Power Gain, Power Added Efficiency
vs. Frequency
20
80
19
70
PAE
18
60
PG
17
VDS = 4.8 V
50
IDQ = 300 mA
Pin = 17 dBm
16
40
450 455 460 465 470 475 480
Frequency f (MHz)
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
21
70
PG
20
65
19
60
PAE
18
55
17
50
16
IDQ = 300 mA
f = 465 MHz
45
Pin = 17 dBm
15
40
3
4
5
6
7
8
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency
vs. Input Power
25
100
PG
20
80
15
60
10
40
PAE
5
VDS = 4.8 V
20
IDQ = 300 mA
f = 465 MHz
0
0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Input Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
VDS = 4.8 V
IDQ = 300 mA
Pin = 17 dBm
-30
450 455 460 465 470 475 480
Frequency f (MHz)
Power Gain, Power Added Efficiency
vs. Idling Current
21
70
20
PAE
65
19
60
18
PG
55
17
50
16
VDS = 4.8 V
f = 465 MHz
45
Pin = 17 dBm
15
40
0
0.1 0.2 0.3 0.4 0.5
Idling Current IDQ (A)
REJ03G1520-0100 Rev.1.00 Jul 04, 2007
Page 7 of 12
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