RJK1555DPA_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK1555DPA
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0.02
0.011shot
pulse
10 µ
100 µ
θ_{ch – c(t) =} γ _{s (t) •} θ _{ch – c}
θ_{ch – c = 4.17°C/W, Tc = 25°C}
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 75 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
REJ03G1783-0200 Rev.2.00 May 20, 2009
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