PA2752GR_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

µPA2752GR
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
R(^D_V^{SG(oSn)=Li1m0itVe}_ID^d) _(DC)
Power
ID(pulse)
1
Dissipa¹_tio⁰_n⁰_L^m_im^1s_it⁰_ed^ms
PW
ms
=
100
µ_s
0.1
Mounted on ceramic substrate
of 2000 mm² x 2.2 mm
Single Pulse, 1 unit
TA = 25˚C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic
2.4
substrate of
2000 mm² × 2.2 mm
2 unit
2.0
1 unit
1.6
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Mounted on ceramic substrate
of 2000 mm² x 2.2 mm
Single Pulse, 1 unit
TA = 25˚C
100
Rth(ch-A) = 73.5˚C/W
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
PW - Pulse Width - s
100
1000
Data Sheet G15716EJ1V0DS
5