PA2714GR_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
35
VGS = −4.0 V
30
25
−4.5 V
20
−10 V
15
10
5
ID = −3.5 A
Pulsed
0
-50
0
50
100
150
Tch - Channel Temperature - °C
µPA2714GR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
10
- 0.01
- 0.1
-1
- 10
- 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
100
10
1
- 0.1
td(off)
tf
tr
td(on)
VDD = −15 V
VGS = −10 V
RG = 10 Ω
-1
- 10
- 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 30
- 12
- 10
VDD = −24 V
−15 V
- 20
−6 V
-8
-6
VGS
- 10
-4
-2
VDS
0
0
0
5
10 15
20 25 30 35
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
VGS = −10 V
0V
100
10
1
0.1
0.01
0
Pulsed
0.2
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
10
di/dt = 100 A/µs
VGS = 0 V
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet G15982EJ2V0DS
5