PA1918_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −4.0 V
Pulsed
250
TA = 125°C
75°C
200
25°C
150
−25°C
100
50
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
µ PA1918
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
250
Pulsed
200
150
ID = −2.0 A
100
50
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
250
ID = −2.0 A
Pulsed
200
VGS = −4.0 V
150
−4.5 V
100
−10 V
50
-50
0
50
100
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
Coss
10
-0.1
Crss
-1
-10
-100
VDS - Drain to Source Voltage - V
1000
100
10
SWITCHING CHARACTERISTICS
VDD = −30 V
VGS = −10 V
RG = 10 Ω
td(off)
tf
td(on)
tr
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-12
ID = −3.5 A
-10
VDD = −48 V
-8
−30 V
−15 V
-6
-4
-2
1
-0.01
-0.1
-1
-10
ID - Drain Current - A
0
0
3
6
9
12
15
QG - Gate Charge - nC
Data Sheet G15926EJ1V0DS
5