PA1760_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

µPA1760
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic
substrate of
2.4
2000 mm²Ã—1.6 mm
2 unit
2.0
1 unit
1.6
1.2
0.8
0.4
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
5
FORWARD BIAS SAFE OPERATING AREA
100
10
1
0.1
I ^R(Da^{St(oVn)GLS i=m1ite0dV}
)
D(DC)
ID(pulse)
Mounted on ceramic
substrate of
2000mm²Ã—1.6mm, 1 unit
1 _ms
PW _{= 100µs}
10 _ms
Power
Dissipation
100 _ms
Limited
TC = 25˚C
0.01 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 73.5˚C/W
10
1
0.1
0.01100 _µ
1m
10 m 100 m
Mounted on ceramic
substrate of 2000mm² × 1.6mm
Single Pulse, 1 unit, TA=25˚C
1
10
100 1 000
PW - Pulse Width - s
Data Sheet G13891EJ2V0DS
5