NP82N04PUG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
-100
VGS = 10 V
ID = 41 A
-50 0 50 100 150 200
Tch - Channel Temperature - °C
NP82N04PUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
tr
100
td(off)
td(on)
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
ID - Drain Current - A
tf
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
10
9
VGS
8
7
8V
6
5
4
3
VDS
2
ID = 82 A ¹
0
20 40 60 80 100 120
QG - Gate Charge - nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
Pulsed
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt =100 A/µs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16858EJ1V0DS
5