NP60N055KUG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
16
14
12
10
8
6
4
VGS = 10 V
ID = 30 A
2
Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
ID - Drain Current - A
td(off)
tr
td(on)
tf
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP60N055KUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
VDD = 44 V
40
28 V
8
11 V
30
6
VGS
20
4
10
0
0
2
VDS
ID = 60 A
Pulsed
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
VGS = 0 V
di/dt = 100 A/µs
Pulsed
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16862EJ1V0DS
5