NP55N04SUG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
6
4
2
0
-100
VGS = 10 V
ID = 28 A
Pulsed
-50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
tr
td(on)
tf
1
0.1
1
10
100
ID - Drain Current - A
1000
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP55N04SUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
10
VDD = 32 V
20 V
8
8V
6
VGS
4
ID = 55 A
2
VDS
Pulsed
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
Data Sheet D17401EJ2V0DS
5