|
NP50P06KDG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET | |||
|
◁ |
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = â4.5 V
20
10
0
-75
â10 V
ID = â25 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(of f )
tf
td(on)
10
tr
VDD = â30 V
VGS = â10 V
RG = 0 Ω
1
-0.1
-1
-10
ID - Drain Current - A
-100
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-10
VGS = â10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP50P06KDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60
-12
-50
VDD = â48 V
-10
â30 V
-40
â12 V
-8
-30
-6
-20
VGS
-4
-10
0
0
VDS
20
40
-2
ID = â50 A
0
60
80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = â100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18689EJ3V0DS
5
|
▷ |