NP36P06SLG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOSFET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
55
50
45
40
VGS = −4.5 V
35
30
−10 V
25
20
15
10
ID = −18 A
5
Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(off)
tf
100
10
tr
td(on)
1
-0.1
VDD = −30 V, VGS = −10 V
RG = 0 Ω
-1
-10
ID - Drain Current - A
-100
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
-10
-1
VGS = −10 V
0V
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP36P06SLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
Crss
-10
-100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60
-12
-50
VDD = −48 V
-10
−30 V
-40
−12 V
-8
-30
-6
VGS
-20
-4
-10
0
0
1000
VDS
20
-2
ID = −36 A
0
40
60
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
-0.1
di/dt = 100 A/μs
VGS = 0 V
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18008EJ5V0DS
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