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NP20P06SLG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOSFET | |||
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
80
VGS = â4.5 V
60
40
â10 V
20
ID = â10 A
Pulsed
0
-75 -25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
10
VDD = â30 V
VGS = â10 V
RG = 0 Ω
1
td(on)
-0.1
-1
-10
ID - Drain Current - A
-100
-100
-10
-1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = â10 V
0V
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP20P06SLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60
-12
-50
VDD = â48 V
-10
â30 V
â12 V
-40
-8
-30
-6
VGS
-20
-4
-10
0
0
VDS
10
20
-2
ID = â20 A
0
30
40
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = â100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19076EJ1V0DS
5
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