NP20P04SLG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOSFET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
40
VGS = −4.5 V
30
−10 V
20
10
0
-75
ID = −10 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
10
1
-0.1
td(on)
tr
VDD = −20 V
VGS = −10 V
RG = 0 Ω
-1
-10
-100
ID - Drain Current - A
-100
-10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = −10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP20P04SLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-12
-30
-20
-10
0
0
VDD = −32 V
−20 V
-9
−8 V
-6
VGS
VDS
10
20
-3
ID = −20 A
0
30
40
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19075EJ2V0DS
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