NP110N03PUG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP110N03PUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3
VGS = 10 V
2.5 ID = 55 A
Pulsed
2
1.5
1
0.5
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
tr
td(off)
td(on)
tf
VDD = 15 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 24 V
15 V
VDS
50 100 150
10
9
8
7
VGS
6
5
4
3
2
ID = 110 A 1
0
200 250 300
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D16851EJ1V0DS
5