M5M5V5636UG-16 Datasheet, PDF (7/25 Pages) Renesas Technology Corp – 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

Renesas LSIs
M5M5V5636UG – 16
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
WRITE TRUTH TABLE
W#
BWa# BWb# BWc# BWd#
Function
H
X
X
X
X Read
L
L
H
H
H Write Byte a
L
H
L
H
H Write Byte b
L
H
H
L
H Write Byte c
L
H
H
H
L Write Byte d
L
L
L
L
L Write All Bytes
L
H
H
H
H Write Abort/NOP
Note14. “H”=input VIH; “L”=input VIL; “X”=input VIH or VIL.
Note15. All inputs except G# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
VDD
Power Supply Voltage
-1.0*~4.6
V
VDDQ
VI
I/O Buffer Power Supply Voltage
Input Voltage
With respect to VSS
-1.0*~4.6
V
-1.0~VDDQ+1.0**
V
VO
Output Voltage
-1.0~VDDQ+1.0**
V
PD
Maximum Power Dissipation (VDD)
1.6
W
TOPR
Operating Temperature
0~70
°C
TSTG(bias) Storage Temperature(bias)
-10~85
°C
TSTG
Storage Temperature
-55~125
°C
Note16.* This is –1.0V when pulse width≤2ns, and –0.5V in case of DC.
** This is –1.0V~VDDQ+1.0V when pulse width≤2ns, and –0.5V~VDDQ+0.5V in case of DC.
7/25
M5M5V5636UG-16 REV.2.0