HM62V16256CBP Datasheet, PDF (7/20 Pages) Renesas Technology Corp – 4 M SRAM (256-kword ´ 16-bit)

Operation Table
CS1 CS2 WE OE UB LB I/O0 to I/O7
H×
×
×
×
×
High-Z
×
L
×
×
×
×
High-Z
×
×
×
×
H
H
High-Z
L
H
H
L
L
L
Dout
L
H
H
L
H
L
Dout
L
H
H
L
L
H
High-Z
L
H
L
×
L
L
Din
L
H
L
×
H
L
Din
L
H
L
×
L
H
High-Z
L
H
H
H
×
×
High-Z
Note: H: V_IH, L: V_IL, ×: V_IH or V_IL
HM62V16256CBP Series
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to V_SS
Terminal voltage on any pin relative to V_SS
Power dissipation
Storage temperature range
V_CC
V_T
P_T
Tstg
Storage temperature range under bias
Tbias
Notes: 1. V_T min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
–0.5 to + 4.6
–0.5*¹ to V_CC + 0.3*²
1.0
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol Min
Supply voltage
V_CC
V_SS
Input high voltage V_CC = 2.2 V to 2.7 V V_IH
V_CC = 2.7 V to 3.6 V V_IH
Input low voltage V_CC = 2.2 V to 2.7 V V_IL
V_CC = 2.7 V to 3.6 V V_IL
Ambient temperature range
Ta
2.2
0
2.0
2.0
–0.2
–0.3
–20
Note: 1. V_IL min: –3.0 V for pulse half-width ≤ 30 ns.
Typ
2.5/3.0
0
—
—
—
—
—
Max
Unit
3.6
V
0
V
V_CC + 0.3 V
V_CC + 0.3 V
0.4
V
0.6
V
70
°C
Note
1
1
5