HD74CBT3257 Datasheet, PDF (7/13 Pages) Hitachi Semiconductor – 4-bit 1-of-2 FET Multiplexer / Demultiplexer

HD74CBT3257
DC Electrical Characteristics
(Ta = −40 to 85°C)
Item
Clamp diode voltage
Input voltage
On-state switch
resistance ^*2
Symbol
V_IK
V_IH
V
IL
R
ON
V_CC (V)
Min
4.5

4.0 to 5.5 2.0
4.0 to 5.5 
4.0

4.5

4.5

4.5

Input current
I
IN
Off-state leakage
I
OZ
current
0 to 5.5 
5.5

Typ ^*1



14
Max
−1.2

0.8
20
5
7
5
7
10
15

±1.0

±1.0
Unit
V
V
Test conditions
I_IN = −18 mA
Ω
V = 2.4 V,
IN
I_IN = 15 mA
Typ at V_CC = 4.0 V
V = 0 V,
IN
I = 64 mA
IN
V_IN = 0 V,
I_IN = 30 mA
V_IN = 2.4 V,
I_IN = 15 mA
µA
V = 5.5 V or GND
IN
µA
0
≤
A,
B
≤
V
CC
Quiescent supply
I_CC
5.5
current
Increase in I_CC
per input ^*3
∆I_CC
5.5


3
µA
V_IN = V_CC or GND,
I_O = 0 mA


2.5
mA One input at 3.4 V,
other inputs at V_CC or
GND
Notes:
For condition shown as Min or Max use the appropriate values under recommended operating
conditions.
1. All typical values are at V = 5 V (unless otherwise noted), Ta = 25°C.
CC
2. Measured by the voltage drop between the A and B terminals at the indicated current through the
switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level
rather than V_CC or GND.
Capacitance
(Ta = 25°C)
Item
Control input
capacitance
Symbol V (V) Min Typ Max Unit
CC
C
IN
5.0

3.5

pF
Test conditions
V = 0 or 3 V
IN
Input / output
A port C_{I/O (OFF)}
5.0

9

pF
V_O = 0 or 3 V
capacitance
B port
5.0

5

OE = V_CC
Note: This parameter is determined by device characterization is not production tested.
Rev.2, Nov. 2001, page 5 of 11