HD74CBT16210 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – 20-bit FET Bus Switch

HD74CBT16210
DC Electrical Characteristics
(Ta = −40 to 85°C)
Item
Clamp diode voltage
Input voltage
On-state switch
resistance ^*2
Symbol
V
IK
V
IH
V_IL
R_ON
V (V) Min
CC
4.5

4.0 to 5.5 2.0
4.0 to 5.5 
4.0

4.5

4.5

4.5

Input current
I_IN
Off-state leakage
I_OZ
current
0 to 5.5 
5.5

Typ ^*1



14
Max
−1.2

0.8
20
5
7
5
7
8
12

±1.0

±1.0
Unit
V
V
Test conditions
I
IN
=
−18
mA
Ω
V_IN = 2.4 V,
I = 15 mA
IN
Typ at V = 4.0 V
CC
V_IN = 0 V,
I_IN = 64 mA
V_IN = 0 V,
I_IN = 30 mA
V = 2.4 V,
IN
I = 15 mA
IN
µA
V_IN = 5.5 V or GND
µA
0 ≤ A, B ≤ V_CC
Quiescent supply
I_CC
5.5
current
Increase in I
CC
per input ^*3
∆I_CC
5.5


3
µA
V_IN = V_CC or GND,
I_O = 0 mA


2.5
mA One input at 3.4 V,
other inputs at V_CC or
GND
Notes:
For condition shown as Min or Max use the appropriate values under recommended operating
conditions.
1. All typical values are at V_CC = 5 V (unless otherwise noted), Ta = 25°C.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the
switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level
rather than V_CC or GND.
Capacitance
(Ta = 25°C)
Item
Control input
capacitance
Symbol V_CC (V) Min
Typ
Max Unit
C_IN
5.0

5

pF
Test conditions
V_IN = 0 or 3 V
Input / output
capacitance
C_{I/O (OFF)}
5.0

7

pF
V_O = 0 or 3 V
OE = V_CC
Note: This parameter is determined by device characterization is not production tested.
Rev.1, Feb. 2002, page 5 of 5