HAT1025R_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1025R
Switching Characteristics
500
200
td(off)
tf
100
tr
50
td(on)
20
10 _{VGS = –4 V, VDD = –10 V}
PW = 3 µs, duty ≤ 1 %
5
–0.2 –0.5 –1 –2 –5
–10 –20
Drain Current I_D (A)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
0.0001
10 µ 100 µ 1 m
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Rev.10.00 Sep 07, 2005 page 5 of 7