HAF1009_15 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1009(L), HAF1009(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-2.0
Pulse Test
-1.6
-1.2
I _D = -40 A
-0.8
-20 A
-0.4
-10 A
0
-2
-4
-6
-8 -10
Gate to Source Voltage V_GS (V)
Static Drain to Source Sate Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = -4 V
20
-10 V
10
5
2
1
-0.1
-0.5 -1
-5 -10
-50 -100
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I _D = -40 A
V_GS = -4 V
40
-20 A
-40 A
-10 A
20
V_GS = -10 V
0
-20 A
-10 A
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
V _DS = -10 V
50 _{Pulse Test}
Tc = -25°C
20
10
5
25°C
2
1
0.5 75°C
0.2
0.1
-0.1
-1
-10
-100
Drain Current I_D (A)
Rev.1.00, May.13.2003, page 5 of 10