H7N1004LD Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon N-Channel MOSFET High-Speed Power Switching

H7N1004LD, H7N1004LS, H7N1004LM
Reverse Drain Current vs.
Source to Drain Voltage
50
0, -5 V
V_GS = 10 V
40
30
5V
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source Drain Voltage V_SD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
I _AP = 15 A
32
V _DD = 50 V
duty < 0.1 %
Rg > 50 Ω
24
16
8
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
• L • I _AP²â€¢
V_DSS
V_DSS – V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Rev.6.00, Aug.27.2003, page 7 of 11