FS12KMA-5A_15 Datasheet, PDF (7/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
VDS = 50V
16
100V
150V
12
8
4
TCh = 25°C
ID = 12A
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS12KMA-5A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
32
TC =
25°C
24
75°C
125°C
16
VGS = 0V
8
Pulse Test
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
VGS = 10V
7 _{ID = 6A}
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10¹
7
5 D = 1.0
3 _{= 0.5}
2
10^{0 = 0.2}
7
5
= 0.1
3
2
10^–1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
= 0.05
= 0.02
= 0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2
10^–42 3
5 710^–32 3
5 710^–22 3
5 710^–12 3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
PULSE WIDTH tw (s)
Sep. 2001