BCR5AS-12B_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C)

BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
III Quadrant
100
80
60
40
I Quadrant
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
100
III Quadrant
80
60
40 I Quadrant
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
7
5 ^{Main Voltage}
Time Typical Example
(dv/dt)c
VD Tj = 150°C
3
Main Current
IT
(di/dt)c
2
τ _Time
I_T = 4A
τ = 500µs
VD = 200V
f = 3Hz
10¹
7
III Quadrant
5
I Quadrant
3
2
Minimum
Characteristics
Value
10⁰
710_{0 2 3 5 7 101 2 3 5 7 102}
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=125°C)
7
5 ^{Main Voltage}
Time Typical Example
(dv/dt)c
VD Tj = 125°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500µs
VD = 200V
10¹
f = 3Hz
7
5
Minimum
3 ^{Characteristics}
Value
2
I Quadrant
10⁰
7
10⁰
23
III Quadrant
5 7 10¹ 2 3
5 7 10²
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
10³
7
5
IRGT III
4
3
2 ^{IRGT I}
Typical Example
10²
7 ^{IFGT I}
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
Gate Current Pulse Width (µs)
REJ03G0451-0400 Rev.4.00 Dec 19, 2008
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